V-NAND Technology
Samsung's V-NAND flash memory helps to overcome the limitations of conventional planar NAND architecture. It stacks 48 cell layers vertically over one another rather than trying to fit itself onto a fixed horizontal space, in order to provide high density and performance with a small footprint.
Sustained Performance
Built to handle the 24/7 operation and heavier workloads of data center usage, the PM863a delivers an exceptionally high level of sustained performance and consistent low latency over the life of the SSD to meet the demands for increasing data handling.
IOPS Consistency
When combined in RAID configurations with multiple drives, small variations are multiplied and lead to significant effects on performance. The PM863a delivers an exceptional level of performance above 99% in random read, as well as superior performance in random write.
Outstanding Reliability
The PM863a is optimized for server and data center environments by offering reinforced endurance, enterprise-grade power-loss protection thanks to tantalum capacitors, low power consumption and a 3-year limited warranty.
Product Type
SATA 6Gb/s
Series
PM863a
Capacity
1.92TB
Sequential Read Speed
520 MB/s
Sequential Write Speed
480 MB/s
Random Read Speed
Random Read IOPS (8 KB): 55K
Random Read IOPS (4 KB): 97K
Random Write Speed
Random Write IOPS (8 KB): 12K
Random Write IOPS (4 KB): 24K
CAS Latency
130
Controller
Mercury
NAND Flash
V-NAND
Trim Support
Deterministic
RAID Support
Y (with RAID Controller)
AES Encryption
AES 256-bit Encryption Engine
Power Consumption (W)
Read: 3 W, Write: 3 W
Voltage
5.0 V + 5%
Reliability (MTBF)
2.0 Million Hours Reliability (MTBF)
Operating Temperature
0oC to 70oC
Non-operating Temperature
40oC to 85oC
Operating Humidity
5 % to 95 %, non-condensing
Shock
1500 G, duration 0.5 ms, Half Sine Wave